Abstract
New modulation-doped quantum semiconductor structures that exhibit strong Fano interference effects have been designed and demonstrated. Intersubband absorption experiments clearly demonstrate the ability to engineer Fano resonances and their evolution toward bound-to-bound transitions as the continuum is progressively modified under the action of an electric field normal to the layers.
© 1996 Optical Society of America
Full Article | PDF ArticleMore Like This
Ansheng Liu
J. Opt. Soc. Am. B 13(8) 1659-1665 (1996)
Diogo De Moura Pedroso, Johannes Schmidt, Angelo Passaro, Manfred Helm, and Harald Schneider
Opt. Express 26(18) 24054-24065 (2018)
Fengxue Zhou, Yihong Qi, Hui Sun, Dijun Chen, Jie Yang, Yueping Niu, and Shangqing Gong
Opt. Express 21(10) 12249-12259 (2013)