Abstract
The ultrafast, room-temperature, resonance-enhanced third-order nonlinear susceptibility tensor of an AlGaAs/GaAs quantum well is determined. A single 6-nm GaAs quantum well embedded in a waveguide of 382-nm mode size increases the |χ(3)| from a bulk-material level of 8 × 10−11 esu ±20% to 6 × 10−10 esu ±20%. The anisotropy of the diagonal elements and their correlation with the off-diagonal elements are consistent with the one-photon resonance mechanism.
© 1991 Optical Society of America
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