Abstract
We have used a 20-kHz ac square-wave electric field to enhance the beam-coupling gain and the degenerate four-wave mixing reflectivity of photorefractive GaAs at 1.06 μm. The largest measured four-wave mixing reflectivity in the steady state was 15% at a grating period of 9 μm and an applied voltage of 3.2 kV across 0.4 cm. Theoretical results predict substantially higher reflectivity values for a field of 8 kV/cm; the origin of this discrepancy is thought to be space-charge effects that prevent us from obtaining the full field inside the crystal. We have also measured a transient reflectivity of 510% during the switch on of the backward pump beam. Finally, we have determined the accuracy of wave-front reversal through measurements of piston-error correction and conjugation fidelity.
© 1988 Optical Society of America
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