Abstract
Terahertz (THz) time-domain spectroscopy is used as a noncontact method to evaluate a nondoped indium phosphide (InP) wafer for the temperature and frequency ranges of and , respectively. The strongly temperature- and frequency-dependent optical constants of the complex refractive index and complex conductivity were observed in the THz region, which were fitted and analyzed with a simple Drude model. The temperature dependence of the carrier density and scattering time are also presented. The shallow donors of impurities are discussed with the obtained results.
© 2009 Optical Society of America
Full Article | PDF ArticleMore Like This
Brian G. Alberding, W. Robert Thurber, and Edwin J. Heilweil
J. Opt. Soc. Am. B 34(7) 1392-1406 (2017)
D. Grischkowsky, Søren Keiding, Martin van Exter, and Ch. Fattinger
J. Opt. Soc. Am. B 7(10) 2006-2015 (1990)
J. W. Han, M. S. Kim, M. S. Song, B. Y. Kang, B. K. Cho, and J. S. Lee
Appl. Opt. 56(9) 2529-2534 (2017)