Abstract
This paper describes the design and performance of high-speed avalanche photodiodes (APDs) for 100-Gbit/s PAM4 operation. The APDs are made with InP- lattice- matched III-V compounds, which are suitable for precise band engineering to simultaneously achieve high-speed and high-responsivity performance with a vertical illumination structure. By utilizing a hybrid absorber consisting of p-type and undoped InGaAs layers as well as a 1.1-eV InAlGaAs gap grading layer between the absorber and InAlAs avalanche layer, the peak bandwidth is effectively boosted to 42 GHz with a responsivity of 0.5 A/W at unity gain. An optical receiver made with the APD performed 40-km 106-Gbit/s PAM4 transmissions over a single-mode fiber without an optical amplifier.
© 2018 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription