Abstract
The strength of Raman interaction between optical fields propagating through a silicon-nanocrystal
waveguide is known to significantly differ from that in bulk silicon and silicon-on-insulator waveguides. Here we
present the first theoretical study of continuous-wave Raman amplification in silicon-nanocrystal waveguides with
improved mode confinement. By calculating numerically the mode-overlap factors and effective refractive indices of the
pump and Stokes fields, we analyze how the maximal Stokes intensity and the optimal waveguide length depend on the
cross-section parameters of the composite, density of silicon nanocrystals, and input conditions. In particular, we
demonstrate that the maximal Stokes intensity peaks at certain waveguide height and volume fraction of silicon
nanocrystals for fixed input intensities, and at certain waveguide width for fixed input powers. These features enable
simple performance optimization of Raman amplifiers and lasers based on silicon nanocrystals.
© 2013 IEEE
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