Abstract
To improve the responsivity of the metal semiconductor metal photodetector
(MSM-PD), we propose and demonstrate the use of sub-wavelength slits in conjunction
with nano-structured the metal fingers that enhance the light transmission
through plasmonic effects. A 4-finger plasmonics-based GaAs MSM-PD structure
is optimized geometrically using a 2-D Finite Difference Domain (FDTD) method
and developed, leading to more than 7-times enhancement in photocurrent in
comparison with the conventional MSM-PD of similar dimensions at a bias voltage
as low as 0.3 V. This enhancement is attributed to the coupling of the surface
plasmon polaritons (SPPs) with the incident light through the nano-structured
metal fingers. This work paves the way for the development of high-responsivity,
high-sensitivity, low bias-voltage high-speed MSM-PDs and CMOS-compatible
GaAs-based optoelectronic devices.
© 2013 IEEE
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