Abstract
This study presents a cost-effective method of producing SiNx
nanopillars on the surfaces of GaN LEDs to enhance light extraction using successive
ionic layer adsorption and reaction (SILAR). The size and density distribution of ZnO
nanoparticles deposited on SiNx can be controlled by altering the ratio
of water and ethylene glycol during SILAR. The nanoparticles are then used as an etching
mask during ICP etching of the SiNx film. Compared to traditional
GaN-based LEDs, the proposed LEDs with SiNx nanopillars increased light
output power by 7.5%–15.2% at 20 mA. This improvement can be attributed mainly to a
reduction in Fresnel reflection and increased scattering caused by the addition of
SiNx nanopillars across the emission surface of GaN LEDs.
© 2013 IEEE
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