Abstract
A staircase approximation method is deployed to model nonuniform field in
the multiplication region and its surrounding ambient of a thin avalanche
photodiode (APD). To the best of our knowledge, this is the first instance
of introducing an equivalent circuit model that is taking the effect of the
electric field profile in a thin APD's multiplication region and its
surroundings into account. This equivalent circuit model that is developed
from the carriers' rate equations also includes the effect of the tunneling
current. The tunneling current that can be induced as a small current
injected into the multiplication region results in an enhanced model
behavior at high reverse bias voltages near breakdown. The output current
obtained from the proposed model is compared with available experimental
data. This comparison reveals excellent model accuracy, in regard to the
current levels and prediction of breakdown voltages for both photo and dark
currents. Moreover, simulations demonstrate ability of the present model for
gain-bandwidth analysis.
© 2010 IEEE
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