Abstract
Transient behavior of the a-Si : H/Si<sub>3</sub>N<sub>4</sub> metal–insulator–semiconductor (MIS) capacitor and its
relationship to the performance of a-Si:H based active-matrix liquid crystal
displays (AMLCDs) have been analyzed in detail. A relatively slow voltage
decay whose time constant is comparable to the frame period of the LCD is
observed after applying a voltage pulse that drives the MIS capacitor into
the electron accumulation. The voltage decay is due to electron emission from
the localized states at the a-Si : H/Si<sub>3</sub>N<sub>4</sub> interface. It is also found that this voltage transient results
in a shift in the optimum common voltage for the liquid crystal pixel by changing
the temperature and light exposure when an MIS-type capacitor is inserted
between the pixel electrode and the adjacent gate bus-line as the storage
capacitor. This shift in the optimum common voltage affects the image quality
of AMLCDs through image sticking or flicker. A similar effect can occur even
without an MIS-type storage capacitor in high resolution AMLCDs, where the
gate-source parasitic capacitance of the thin—film transistor is comparable
to the net capacitance of the pixel. It is important to take such transient
effects of MIS capacitors into consideration in pixel designing.
© 2007 IEEE
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