Abstract
In this paper, we investigated the bipolar conduction mechanism
in thin-film transistors (TFTs) with oxygen plasma treatment on tin-oxide
channel. The optimized p-type thin-oxide TFTs showed an on/off ratio
of
${>}{{10}}^{4}$
, a threshold voltage of
$-$
1.05 V, and a field-effect mobility
of
${{2.14}}\
{{cm}}^{2}{\cdot}{{V}}^{-1}{\cdot}{{s}}^{-1}$
. By increasing the exposure time of oxygen plasma, excess
oxygen was incorporated to thin-oxide channel and converted thin monoxide
to oxygen-rich n-type thin dioxide, which in turn led to n-type operation.
It indicated that oxygen plasma was the critical factor to determine
oxygen concentration, oxygen vacancies, metal ions and channel polarity.
This proposed oxygen-content tuning through plasma treatment approach
shows great promise in simplification of TFT process that can achieve
n-type and p-type TFTs under the same device process.
© 2015 IEEE
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