Abstract

The self-assembled InAs/GaAs quantum dots (QDs) with extremely low density of 8×10⁶ cm^-2 are achieved using higher growth temperature and lower InAs coverage by low-pressure metal-organic chemical vapour deposition (MOVCD). As a result of micro-photoluminescence (micro-PL), for extremely low density of 8×10⁶ cm^-2 InAs QDs in the micro-PL measurements at 10 K, only one emission peak has been achieved. It is believed that the InAs QDs have a good potential to realize single photon sources.

© 2008 Chinese Optics Letters

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