Abstract
Measurements of the excitation power-dependence and temperature-dependence
photoluminescence (PL) are performed to investigate the emission mechanisms of InGaN/GaN
quantum wells (QWs) in laser diode structures. The PL spectral peak is blueshifted with
increasing temperature over a certain temperature range. It is found that the blueshift
range was larger when the PL excitation power is smaller. This particular behavior
indicates that carriers are thermally activated from localized states and partially
screen the piezoelectric field present in the QWs. The small blueshift range corresponds
to a weak quantum-confined Stark effect (QCSE) and a relatively high internal quantum
efficiency (IQE) of the QWs.
© 2016 Chinese Laser Press
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