Abstract
The fluorescence of graphene oxide quantum dots (GOQDs) that are infiltrated into
porous silicon (PSi) is investigated. By dropping activated GOQDs solution onto
silanized PSi samples, GOQDs are successfully infiltrated into a PSi device. The results
indicate that the intensity of the fluorescence of the GOQD-infiltrated multilayer with
a high reflection band located at its fluorescence spectra scope is approximately double
that of the single layer sample. This indicates that the multilayer GOQD-infiltrated PSi
substrate is a suitable material for the preparation of sensitive photoluminescence
biosensors.
© 2016 Chinese Laser Press
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