Extremely high-power CO<sub>2</sub> laser beam correction

Alexis Kudryashov; Alexander Alexandrov; Alexey Rukosuev; Vadim Samarkin; Pierre Galarneau; Simon Turbide; François Châteauneuf

doi:10.1364/AO.54.004352

Applied Optics
Vol. 54,
Issue 14,
pp. 4352-4358
(2015)
•https://doi.org/10.1364/AO.54.004352

Extremely high-power CO₂ laser beam correction

Alexis Kudryashov, Alexander Alexandrov, Alexey Rukosuev, Vadim Samarkin, Pierre Galarneau, Simon Turbide, and François Châteauneuf

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Alexis Kudryashov, Alexander Alexandrov, Alexey Rukosuev, Vadim Samarkin, Pierre Galarneau, Simon Turbide, and François Châteauneuf, "Extremely high-power CO₂ laser beam correction," Appl. Opt. 54, 4352-4358 (2015)

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Abstract

This paper presents the results of high-power ${CO}_{2}$ laser-aberration correction and jitter stabilization. A bimorph deformable mirror and two tip-tilt piezo correctors were used as executive elements. Two types of wavefront sensors, one Hartmann to measure higher-order aberrations (defocus, astigmatism etc.) based on an uncooled microbolometer long-wave infrared camera and the other a tip-tilt one based on the technology of obliquely sputtered, thin chromium films on Si substrates, were applied to measure wavefront aberrations. We discuss both positive and negative attributes of suggested wavefront sensors. The adaptive system is allowed to reduce aberrations of incoming laser radiation by seven times peak-to-valley and to stabilize the jitter of incoming beams up to 25 μrad at a speed of 100 Hz. The adaptive system frequency range for high-order aberration correction was 50 Hz.

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Mirror type	Bimorph
Mirror diameter	180 mm
Initial surface flatness	1.2 μm
Mirror substrate	silicon
Actuator type	PZT disc
Deformation range	40 μm
Reflectivity	99.5% at $λ = 10.6 μm$
Frequency bandwidth	800 Hz
Control electrode number	52
Control voltage range	$- 350 \dots 500 V$

Mirror diameter	Up to 200 mm
Mirror substrate	silicon
Surface flatness	$λ / 10 a t 10.6 μm$
Reflectivity	$> 99.5 % a t 10.6 μm$
Dynamic range	$\pm 500 μrad$
Tilt resolution	0.2 μrad
Inter axes coupling	2%
Open loop bandwidth	300 Hz
Control voltage range	$- 20 \dots + 130 V$

Substrate material	Silicon
Substrate thickness, mm	0.465
Working wavelength, μ	4…12
Absorption for $λ = 10.6 μm$ and $α = (0 - 13) °$	$< 10 %$
Sensitivity for $λ = 10.6 μm$ , mV/W	0.5
Response time, μs	$< 10$
Resistance, Ohm	$< 100$
Active zone size, mm	$9 \times 9$
Output signal to noise ratio, dB	27

Mirror type	Bimorph
Mirror diameter	180 mm
Initial surface flatness	1.2 μm
Mirror substrate	silicon
Actuator type	PZT disc
Deformation range	40 μm
Reflectivity	99.5% at $λ = 10.6 μm$
Frequency bandwidth	800 Hz
Control electrode number	52
Control voltage range	$- 350 \dots 500 V$

Mirror diameter	Up to 200 mm
Mirror substrate	silicon
Surface flatness	$λ / 10 a t 10.6 μm$
Reflectivity	$> 99.5 % a t 10.6 μm$
Dynamic range	$\pm 500 μrad$
Tilt resolution	0.2 μrad
Inter axes coupling	2%
Open loop bandwidth	300 Hz
Control voltage range	$- 20 \dots + 130 V$

Abstract

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Equations (7)

Applied Optics