Abstract
We have fabricated and characterized a weak light photodetector in a heterojunction composed of manganite and n-type Si. High-sensitivity photoresponse properties were investigated. The responsivities of open-circuit photovoltage and short-circuit photocurrent reach and , respectively, without any amplification bias under irradiation by -wide and 355, 532, and -wavelength laser pulses in nanojoule to microjoule order. The present results demonstrate that the manganite-based heterojunction on Si substrate has potential applications in weak light detection from ultraviolet to near-infrared light.
© 2011 Optical Society of America
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