Abstract
GaN is a wide-bandgap semiconductor with still unexplored capabilities for ultraviolet detection. To exploit GaN properties better for ultraviolet detection, a metal–semiconductor–metal-type photodetector structure was designed and manufactured on a thin GaN membrane fabricated by micromachining techniques. As a result, a very low dark current ( at ) and a maximum responsivity of at a wavelength of were obtained.
© 2008 Optical Society of America
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