Abstract
Construction and performance of a high-speed retardation modulation ellipsometer are described. An ADP four-crystal electrooptic modulator is used for the retardation modulation and a high-speed digitizer for the simultaneous detection of the transmitted light intensity and the modulation voltage. The ellipsometer can acquire the necessary data for determining a data point (Ψ,Δ) in 4 μsec and repeat the data acquisition for fifty data points at intervals of 4 μsec–160 msec. In such conditions, precision represented in terms of an average of root mean squares is 0.05° in Ψ and 0.15° in Δ when a BaK1 standard optical glass is used as a sample at the present stage. An example is given of the application to rapid growth of anodic films on a semiconductor GaAs wafer.
© 1983 Optical Society of America
Full Article | PDF ArticleCorrections
A. Moritani, Y. Okuda, H. Kubo, and J. Nakai, "High-speed retardation modulation ellipsometer: erratum," Appl. Opt. 23, 11-11 (1984)https://opg.optica.org/ao/abstract.cfm?uri=ao-23-1-11
More Like This
A. Moritani, Y. Okuda, and J. Nakai
Appl. Opt. 22(9) 1329-1338 (1983)
D. E. Aspnes and A. A. Studna
Appl. Opt. 14(1) 220-228 (1975)
A. Moritani and J. Nakai
Appl. Opt. 21(18) 3231-3232 (1982)