Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Design of a MOS phototransistor for modification of Graphene optical properties at near-IR wavelengths

Not Accessible

Your library or personal account may give you access

Abstract

The optical properties of graphene at T=0 K by changing its number of carriers have been investigated in a phototransistor structure. Absorption changes of about 0.8% at a wavelength of 1000 nm can be obtained.

© 2014 Optical Society of America

PDF Article
More Like This
Measurement of the Optical Properties of Graphene from THz to Near-IR

Jahan M. Dawlaty, Paul George, Jared Strait, Shriram Shivaraman, Mvs Chandrashekhar, Farhan Rana, and Michael G. Spencer
CThBB2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008

Measurement of the Nonlinear Optical properties of Silver Nanoparticles and Graphene Oxide Nanocomposite

Subrata Biswas, Arup Kanti Kole, and Pathik Kumbhakar
T3A.39 International Conference on Fibre Optics and Photonics (Photonics) 2014

Nonlinear Optical Properties of a Graphene-based DNA Composite

Saima Husaini, Alyssa Lesko, Emily M. Heckman, and Robert G. Bedford
SM3H.7 CLEO: Science and Innovations (CLEO:S&I) 2014

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.