Abstract
Nearly-lattice-matched or pseudomorphically-grown III-V semiconductor quantum structures such as quantum wells, quantum dots, and superlattices can provide high degree of flexibility in terms cutoff wavelength range. In this presentation, we describe the development of long-wavelength quantum well infrared photodetectors (QWIPs) for imaging spectrometer applications and quantum dot infrared photodetectors (QDIPs) for long-wavelength applications. In addition, III-V semiconductors offer a highly effective platform for the development of sophisticated heterostructure-based MWIR and LWIR detectors, as exemplified by the high-performance double heterstructure (DH) nBn, XBn, and type-II superlattice infrared detectors. A key enabling design element is the unipolar barrier, which is used to implement the complementary barrier infra-red detector (CBIRD) design for increasing the collection efficiency of photo-generated carriers, and reducing dark current generation without impeding photocurrent flow. Heterostructure superlattice detectors that make effective use of unipolar barriers have demonstrated strong reduction of generation-recombination (G-R) dark current due to Shockley-Read-Hall (SRH) processes.
© 2014 Optical Society of America
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