Abstract

Semiconductor lasers are normally used as single-photon sources in most commercial and research quantum key distribution (QKD) systems [1]. These lasers are also used for quantum random number generation (QRNG) that is a necessary security requirement for QKD. In device-dependent QRNGs unpredictability is guaranteed by comparing experimental measurements with simulation data obtained from a model of the physical entropy source [2]. The characterization of phase fluctuations in a gain-switched edge-emitting semiconductor laser for QRNG has been recently performed [2]. Very recently a QRNG based on the random excitation of the linearly polarized modes of a gain-switched vertical-cavity surface-emitting laser (VCSEL) has also been proposed [3]. In this work we characterize the polarization fluctuations found in this system by comparing experimental measurements with the results obtained from the simulation of a VCSEL’s model that incorporates the device intrinsic parameters found using state-of-the-art experimental techniques [4].

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