Abstract
Here we show how strain-engineering (~4% tensile strain) lowers the bandgap (-0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz^2.
© 2020 The Author(s)
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