Abstract
The site-controlled quantum dot was obtained for hetero-integration of single photon emitter with silicon photonic circuit and fiber optics. By using selective-area growth method, the InAs quantum dot was formed on the InP pyramid which showed single photon emission from 1100 to 1300 nm. The hetero-integrated structure was designed as InAs quantum dot on the silicon waveguides with high coupling efficiency and fabricated by micro-transfer technique.
© 2019 The Author(s)
PDF ArticleMore Like This
Young-Ho Ko, Won Seok Han, Kap-Joong Kim, Byung-Seok Choi, Kyu Young Kim, Je-Hyung Kim, Chun Ju Youn, Jong-Hoi Kim, and Jung Jin Ju
ck_p_37 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2019
Peter Schnauber, Anshuman Singh, Johannes Schall, Jin Dong Song, Sven Rodt, Kartik Srinivasan, Stephan Reitzenstein, and Marcelo Davanco
STu4J.6 CLEO: Science and Innovations (CLEO:S&I) 2019
A. Delgoffe, A. Miranda, A. Lyasota, A. Rudra, B. Dwir, Y. Yu, and E. Kapon
FTh3D.3 CLEO: QELS_Fundamental Science (CLEO:FS) 2019