Electrically Pumped 1.3-µm InAs/GaAs Quantum Dot Laser Monolithically Grown on Si Substrate Lasing up to 111°C

Siming Chen; Mingchu Tang; Qi Jiang; Jiang Wu; Vitaliy G. Dorogan; Mourad Benamara; Yuriy I. Mazur; Gregory J. Salamo; Alwyn Seeds; Huiyun Liu

doi:10.1364/CLEO_SI.2015.SW3F.1

CLEO: 2015
OSA Technical Digest (online) (Optica Publishing Group, 2015),
paper SW3F.1
•https://doi.org/10.1364/CLEO_SI.2015.SW3F.1

Electrically Pumped 1.3-µm InAs/GaAs Quantum Dot Laser Monolithically Grown on Si Substrate Lasing up to 111°C

Siming Chen, Mingchu Tang, Qi Jiang, Jiang Wu, Vitaliy G. Dorogan, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, Alwyn Seeds, and Huiyun Liu

CLEO: Science and Innovations 2015

San Jose, California United States
10–15 May 2015
ISBN: 978-1-55752-968-8

From the session
III-V Lasers on Silicon (SW3F)

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S. Chen, M. Tang, Q. Jiang, J. Wu, V. G. Dorogan, M. Benamara, Y. I. Mazur, G. J. Salamo, A. Seeds, and H. Liu, "Electrically Pumped 1.3-µm InAs/GaAs Quantum Dot Laser Monolithically Grown on Si Substrate Lasing up to 111°C," in CLEO: 2015, OSA Technical Digest (online) (Optica Publishing Group, 2015), paper SW3F.1.

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Abstract

A silicon-based InAs/GaAs quantum dot laser that lases up to 111°C, with a threshold current density of 200 A/cm² and an output power exceeding 100 mW at room temperature, has been achieved by using InAlAs/GaAs strained-layer superlattices as dislocation filter layers.

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