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Strain-Engineered SiGe Quantum-Well Nanomembranes for Far-Infrared Intersubband Device Applications

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Abstract

SiGe/Si quantum-well nanomembranes, where stress due to lattice mismatch is relaxed via elastic strain sharing rather than defect formation, are developed and their potential for far-infrared intersubband device applications is demonstrated.

© 2013 Optical Society of America

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