Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO_SI > 2013 > CF1I > CF1I.2

InAs Quantum Dot Growth Using Bismuth as a Surfactant for Optoelectronic Applications

Vaishno D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank

Not Accessible

Your library or personal account may give you access

Abstract

We report the use of a bismuth surfactant to increase self-assembled InAs quantum dot emission intensity, decrease the linewidth, and extend the emission wavelength with increasing InAs deposition, without the concomitant loss of dot density.

© 2013 Optical Society of America

PDF Article
More Like This
Improving the Luminescence Properties of Multi-stacked InAs/GaAs Quantum Dots by GaAsP Strain-reducing Layer

Zhiqiang Bian, Qi Wang, Zhigang Jia, Zhihong Pan, Xiaomin Ren, Shiwei Cai, Jun Wang, and Yongqing Huang
AF1B.5 Asia Communications and Photonics Conference (ACP) 2013

Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors

Xiaodong Mu, Yujie J. Ding, Zhiming Wang, and Gregory J. Salamo
CTuS5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2003

The effect of growth temperature on InAs quantum dots grown by MOCVD

Tianhe Li, Xin Guo, Qi Wang, Pengyu Wang, Zhigang Jia, Xiaomin Ren, Yongqing Huang, and Shiwei Cai
83082B Asia Communications and Photonics Conference and Exhibition (ACP) 2011

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use