GaSb-based high-power single-spatial-mode lasers at 2.0 µm

Kale J. Franz; Clifford Frez; Jianfeng Chen; Yueming Qiu; Daniel V. Freilich; Leon Shterengas; Gregory L. Belenky; Siamak Forouhar

doi:10.1364/CLEO_SI.2011.CTuC6

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CTuC6
•https://doi.org/10.1364/CLEO_SI.2011.CTuC6

GaSb-based high-power single-spatial-mode lasers at 2.0 µm

Kale J. Franz, Clifford Frez, Jianfeng Chen, Yueming Qiu, Daniel V. Freilich, Leon Shterengas, Gregory L. Belenky, and Siamak Forouhar

CLEO: Science and Innovations 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

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Mid Infrared Lasers (CTuC)

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K. J. Franz, C. Frez, J. Chen, Y. Qiu, D. V. Freilich, L. Shterengas, G. L. Belenky, and S. Forouhar, "GaSb-based high-power single-spatial-mode lasers at 2.0 µm," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CTuC6.

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Abstract

We report single spatial mode diode lasers operating near 2.05 µm with room-temperature continuous-wave output power exceeding 100 mW. At 20 °C, threshold currents were near 25 mA (320 A/cm²).

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