Abstract
A GaSb-based type-I diode laser heterostructure was grown with a highly mismatched GaAs top clad using MBE. A direct comparison of laser diode characteristics with a conventional structure indicates that despite the fully relaxed clad layer, high peak power >300 mW is generated by these devices. The small increase in the threshold current density and ~27% reduction in the slope efficiency is likely due to increase in the internal loss due to defects.
© 2018 The Author(s)
PDF ArticleMore Like This
K. Kashani-Shirazi, A. Bachmann, S. Arafin, K. Vizbaras, and M.-C. Amann
CTuGG5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009
M. Mehta, G. Balakrishnan, M.N. Kutty, P. Patel, L.R. Dawson, and D.L. Huffaker
CThK6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007
Paveen Apiratikul, Lei He, and Christopher J. K. Richardson
JTuI100 CLEO: Applications and Technology (CLEO:A&T) 2011