Abstract
Temperature and power dependent photoluminescence (PL) measurements from InGaN/GaN MQWs, which was grown on a sapphire substrate were performed to extract the PL efficiency.
© 2018 The Author(s)
PDF ArticleMore Like This
Abbas Sabbar, Syam Madhusoodhanan, Huong Tran, Binzhong Dong, Jiangbo Wang, Alan Mantooth, Shui-Qing Yu, and Zhong Chen
JTh2D.16 CLEO: Applications and Technology (CLEO:A&T) 2020
Y. S. Wang, N. C. Chen, and J. F. Chen
C338 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2011
Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, and Nelson Tansu
JWA70 CLEO: Applications and Technology (CLEO:A&T) 2011