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Ge/SiGe Quantum-well Micro-bridges with High Tensile Strain

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Abstract

Highly tensile-strained Ge/SiGe MQW structures on Si substrates are formed by introducing micro-bridge structures. Lattice matching and strain of epitaxial structures are analyzed by XRD. Large strain induced by micro-bridges is confirmed with Raman spectroscopy.

© 2017 Optical Society of America

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