Abstract
A detailed comparison of ultrafast electron emission from structured, silicon nano-tips driven by 800 nm and 2.1 µm pulses was performed. In the low energy portion of the spectrum, a saturation of the direct electron energy bandwidth to ≈1.6 eV for 800 nm and ≈ 1 eV for 2.1 µm was observed.
© 2017 Optical Society of America
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