Abstract
During the last twenty years many efforts have been devoted to the development of direct laser writing technique for the manufacture of both passive and active optical devices in various materials [1]. As far as infrared spectral range is concerned, chalcogenide glasses are one of the most evident material to use for production of integrated component because of their wide transparency range from the visible up to more than 20 µm. Here we present a new method to produce waveguide by direct laser writing technique in germanium, gallium, and sulfur based glass (90 [0.80 GeS2 − 0.20 Ga2S3] − 10 CsCl) for mid-infrared applications.
© 2019 IEEE
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