Abstract
Terahertz (THz) quantum cascade lasers (QCLs) are powerful coherent light sources covering the frequency range from 1.2 to 5.4 THz, but still suffer from operation temperatures below 200 K [1]. Beside the standard material system GaAs/AlGaAs novel material systems with lower effective electron masses were investigated to improve the operation temperature of THz QCLs. These materials include InGaAs and InAs based systems [2-4] which benefit from a higher optical gain but suffer from molecular beam epitaxy growth issues due to their very thin barrier layers.
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