Abstract

Semiconductor III-V nanowires are one of the key nanostructures for new generation of optoelectronic and nanophotonic devices. The most unique feature of the III−V nanowires is the possibility to engineer crystal phases that cannot be obtained at normal conditions in bulk III−V materials [1]. For example, it is possible to grow III−V nanowires with pure wurtzite, with combined wurtzite/zinc blende phases and with rotational zinc blende twins along single nanowire. The possibilities to engineer crystal structures of III-V materials make nanowires promising structures for nonlinear photonics application. The most common technique to characterize the crystal structure of nanowires is transmission electron microscopy (TEM), but this technique requires to deposit nanostructures on the special TEM substrates and it cannot be used for a non-destructive analysis of nanowires implemented, for example in lab-on-chip devices or computer components.

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