Abstract
Recently, a wafer-scalable strain technology has been introduced to concentrate built-in strain by patterning and etching micron-sized suspended bridges [1], c.f. Fig. 1a). Strain which is sufficient to convert the band gap of Ge from indirect to direct was demonstrated, giving the prospect to build an efficient laser out of one of the most attractive materials that can be merged with Si in CMOS processes.
© 2015 IEEE
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