Abstract
Edge-emitting broad area (BA) semiconductor lasers are robust, compact and highly efficient devices for the generation of high power beams. The spatial and temporal quality of these beams, however, is rather weak. To improve the beam quality in such BA lasers, we propose to intrinsically introduce a two-dimensional gain and index modulation (GIM) on the semiconductor media, with appropriate longitudinal and lateral periods. This modulation can be realized, e.g., by the periodic structuring of the electrodes.
© 2015 IEEE
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