Abstract
Rare-earth-ion-doped aluminum oxide layers are promising for active integrated optics applications, such as waveguide amplifiers and lasers [1]. For large-scale realization of such active devices, the development of a stable, reproducible and straightforward layer deposition method is required. Furthermore, a suitable method for etching waveguide structures with highly-vertical, smooth side walls and low optical losses is necessary. In this paper, both a reactive co-sputtering process resulting in high optical quality A12O3 layers and a reactive ion etching process for defining low-loss rib waveguide structures are presented.
© 2007 IEEE
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