Abstract
We experimentally characterize mid-infrared intersubband transitions in identical Al0.5Ga0.5N/GaN heterostructures grown on a- and m-plane GaN substrates. The absorption peaks of the m-plane samples are 10 to 40% narrower than that of the a-plane samples.
© 2020 The Author(s)
PDF ArticleMore Like This
Xin Rong, Xinqiang Wang, Guang Chen, Ping Wang, Xiantong Zheng, Fujun Xu, and Bo Shen
ATh3A.44 Asia Communications and Photonics Conference (ACP) 2014
J. Zhang, W. Tian, F. Wu, S. Wang, J. W. Chen, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen
JW3A.27 Optoelectronic Devices and Integration (OEDI) 2015
Claire Gmachl, Hock M. Ng, Jörg D. Heber, Kirk W. Baldwin, Alfred Y. Cho, and S. N. George Chu
TuF2 Optical Fiber Communication Conference (OFC) 2002