Abstract
We report high-performance GaN avalanche photodiodes using a novel ion implanted isolation technique. The devices showed low dark current, an equivalent noise power of < 5×10−16 WHz−0.5 and avalanche gain of 7×105 at λ = 280 nm.
© 2020 The Author(s)
PDF Article | Presentation VideoMore Like This
Jin Zhang, Ana Pejkic, Bill Ping-Piu Kuo, and Stojan Radic
STh3O.2 CLEO: Science and Innovations (CLEO:S&I) 2020
Jingchang Zhang, Yaru Han, Bing Xiong, Yi Luo, Changzheng Sun, Lai Wang, Jian Wang, Yanjun Han, Zhibiao Hao, Hongtao Li, and Jiadong Yu
JTh2D.18 CLEO: Applications and Technology (CLEO:A&T) 2020
P. P. WEBB, R. J. McINTYRE, J. SCHEIBLING, and M. HOLUNGA
WQ32 Optical Fiber Communication Conference (OFC) 1988