Improved 1.3 µm In(Ga)As Quantum Dot Lasers by Engineering the GaAs Spacer Layers

C. L. Walker; I. C. Sandall; P. M. Smowton; T. J. Badcock; D. J. Mowbray; H. Y. Liu; M. Hopkinson

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2006),
paper CThGG6

Improved 1.3 µm In(Ga)As Quantum Dot Lasers by Engineering the GaAs Spacer Layers

C. L. Walker, I. C. Sandall, P. M. Smowton, T. J. Badcock, D. J. Mowbray, H. Y. Liu, and M. Hopkinson

Conference on Lasers and Electro-Optics 2006

Long Beach, California United States
21–26 May 2006
ISBN: 1-55752-813-6

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Quantum Dot II (CThGG)

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C. L. Walker, I. C. Sandall, P. M. Smowton, T. J. Badcock, D. J. Mowbray, H. Y. Liu, and M. Hopkinson, "Improved 1.3 µm In(Ga)As Quantum Dot Lasers by Engineering the GaAs Spacer Layers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2006), paper CThGG6.

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Abstract

Greatly improved threshold current and modal gain performance of 1.3 µm quantum dot lasers is achieved by engineering the GaAs spacer layers between dot layers to improve dot homogeneity and enable closer dot layers.

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