Abstract
A new fully integrated CMOS optical-type fingerprint recognition
system with silicon light-emitting devices (LEDs) and photodiodes
is proposed. A three-terminal n+-p-n+ silicon CMOS LED is designed
and implemented as a key block to replace the bulky optical light
source and to realize a slim and integrated fingerprint sensor. The
proposed LED employs injection-enhanced silicon in an avalanche mode,
where E-field confinement with a wedge shape at a reverse biased p-n+
junction and hot-carrier injection from the adjacent forward biased
p-n+ junction are applied to increase the quantum conversion efficiency
of the LED. The developed
LED was fabricated in a 0.18
$\mu{{m}}$
CMOS process. It emits
1.27 nW at a 600 nm wavelength consuming 2 mA at a 0.5 V reverse biased
voltage and 2 V forward biased voltage. It provides an electrical-to-optical
power conversion efficiency of
${{1.27}}\times {{10}}^{-6}$
.
© 2015 IEEE
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