Abstract
In this paper, we propose a novel amorphous silicon gate driver
(ASG) circuit with useful driving methods in saving power consumption
and improving driving capability as well. Unlike other driving methods
that are used to improve the driving capability also increases the
power consumption strikingly. In this paper, an ASG circuit with novel
driving method is proposed and realized in standard 5-mask hydrogenated
amorphous-silicon thin-film transistors (a-Si:H TFTs) process. The
circuit consisting of 13 a-Si:H TFTs is used in portable flat-panel
displays (FPDs) for the high driving capability and low power characteristic.
By comparing other driving methods, the results of the definitive
measurement show that the minimum driving high voltage is improved
with 2 volts increment and the power consumption increases 9.7% slightly.
Moreover, the other dynamic characteristics of the ASG, such as the
rise time and fall time of the outputs, can be improved at the same
time. To validate the results, the designate circuit is fabricated
with 5-
$\mu$
m a-Si:H TFT process and the experimental results confirm
the practicability of achieved design. Three different driving methods
are adopted in the same ASG circuit to respond three individual output
characteristics.
© 2015 IEEE
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