Abstract

We comprehensively investigate the energy band diagrams, carrier distribution, spontaneous emission rate $r_{\mathrm{sp}}$, and the internal quantum efficiency ${\eta }_{\mathrm{IQE}}$ in the lattice-matched GeSn/SiGeSn double heterostructure light-emitting diode (LED) wrapped in a ${\mathrm{Si}}_3{\mathrm{N}}_4$ liner stressor. The large tensile strain introduced into the device by the expansion of the ${\mathrm{Si}}_3{\mathrm{N}}_4$ liner is characterized by numerical simulation. A lower Sn composition required for the indirect to direct bandgap transition and a higher ratio of the electron occupation probability in the $\mathrm{\Gamma }$ conduction valley are achieved in the tensile strained GeSn/SiGeSn LED in comparison with the relaxed device. Analytical calculation shows that the tensile strained LED wrapped in the ${\mathrm{Si}}_3{\mathrm{N}}_4$ liner stressor exhibits the improved $r_{\mathrm{sp}}$ and ${\eta }_{\mathrm{IQE}}$ compared to the relaxed device. $r_{\mathrm{sp}}$ and ${\eta }_{\mathrm{IQE}}$ also can be enhanced by increasing Sn composition, carrier injection density, and n-type doping concentration in the GeSn active layer.

© 2016 Optical Society of America

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