Abstract
High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality MD lasers on GaAs substrates. Microlasers on silicon emit in the wavelength range of 1320–1350 nm via the ground state transition of InAs/InGaAs/GaAs quantum dots. The high stability of the lasing wavelength () and the low specific thermal resistance of are demonstrated.
© 2017 Optical Society of America
Full Article | PDF ArticleMore Like This
Alan Y. Liu, Jon Peters, Xue Huang, Daehwan Jung, Justin Norman, Minjoo L. Lee, Arthur C. Gossard, and John E. Bowers
Opt. Lett. 42(2) 338-341 (2017)
N. V. Kryzhanovskaya, E. I. Moiseev, Yu. S. Polubavkina, M. V. Maximov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, A. A. Lipovskii, N. V. Baidus, A. A. Dubinov, Z. F. Krasilnik, A. V. Novikov, D. A. Pavlov, A. V. Rykov, A. A. Sushkov, D. V. Yurasov, and A. E. Zhukov
Opt. Express 25(14) 16754-16760 (2017)
Si Zhu, Bei Shi, and Kei May Lau
Opt. Lett. 44(18) 4566-4569 (2019)