Internal gain in Er-doped As<sub>2</sub>S<sub>3</sub> chalcogenide planar waveguides

Kunlun Yan; Khu Vu; Steve Madden

doi:10.1364/OL.40.000796

Optics Letters
Vol. 40,
Issue 5,
pp. 796-799
(2015)
•https://doi.org/10.1364/OL.40.000796

Internal gain in Er-doped As₂S₃ chalcogenide planar waveguides

Kunlun Yan, Khu Vu, and Steve Madden

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Kunlun Yan, Khu Vu, and Steve Madden, "Internal gain in Er-doped As₂S₃ chalcogenide planar waveguides," Opt. Lett. 40, 796-799 (2015)

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Abstract

Low-loss erbium-doped ${As}_{2} S_{3}$ planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.

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Optics Letters