Abstract

We report on the design, fabrication, and characterization of thin ${\mathrm{Si}}_3{\mathrm{N}}_4$ ultra-high-quality (UHQ) factor ring resonators monolithically integrated on a silicon chip. The devices are based on a strip-loaded configuration and operate at both near-infrared (NIR) and third-telecom wavelengths. This approach allows us to use a guiding ${\mathrm{Si}}_3{\mathrm{N}}_4$ core that is one order of magnitude thinner than what has been reported in the past for obtaining similar device performances. Our strip-loaded devices benefit from the absence of physically etched lateral boundaries to show minute light scattering and, therefore, reducing significantly scattering-related losses. Consequently, UHQs of $3.7\times {10}^6$ in the NIR and high-quality factors of up to $9\times {10}^5$ in the C-band were measured for the guiding material thickness of 80 nm and 115 nm, respectively. These first results are subject to further improvements that may allow employing strip-loaded resonators in nonlinear frequency conversion or quantum computing schemes within the desired spectral range provided by the material transparency.

© 2015 Optical Society of America

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