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Large phase shifts in As 2 S 3 waveguides for all-optical processing devices

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Abstract

A large phase shift of 4.7π at 1.53μm has been observed from a low-loss (0.2dBcm), small-core As2S3 waveguide fabricated by dry etching. The strength of the nonlinear response was limited by photosensitivity and photocrystallization of the As2S3 films at 1.53μm, far below the material bandgap.

© 2005 Optical Society of America

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