Abstract

As much as 47 μW of cw infrared radiation and 89 μW of pulsed infrared radiation, tunable near 4.3 μm, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al2O₃ laser at 715 nm (pump wave) in AgGaS₂. The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed.

© 1993 Optical Society of America

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