Abstract
The growth of low-temperature-grown GaAs (LTG-GaAs) on semi-insulating GaAs substrate with a 0.2 μm -GaAs buffer demonstrated enhanced terahertz (THz) emission in reflection and transmission excitation geometries via time-domain spectroscopy. The transient photocurrent of the sample in reflection and transmission geometries resulting from ultrafast excitation yielded a 215% and 165% increase in the THz emission, respectively, as compared with a sample grown with an undoped GaAs buffer. The LTG-GaAs film with -GaAs buffer exhibited a significant increase in its built-in field as supported by calculations and photoreflectance experiments. The enhanced THz emission intensity was comparable with bulk -InAs.
© 2014 Optical Society of America
Full Article | PDF ArticleMore Like This
Elizabeth Ann P. Prieto, Sheryl Ann B. Vizcara, Lorenzo P. Lopez, John Daniel E. Vasquez, Maria Herminia M. Balgos, Daisuke Hashizume, Norihiko Hayazawa, Yousoo Kim, Masahiko Tani, Armando S. Somintac, Arnel A. Salvador, and Elmer S. Estacio
Opt. Mater. Express 8(6) 1463-1471 (2018)
Valynn Katrine Mag-usara, Stefan Funkner, Gudrun Niehues, Elizabeth Ann Prieto, Maria Herminia Balgos, Armando Somintac, Elmer Estacio, Arnel Salvador, Kohji Yamamoto, Muneaki Hase, and Masahiko Tani
Opt. Express 24(23) 26175-26185 (2016)
D. McBryde, M. E. Barnes, S. A. Berry, P. Gow, H. E. Beere, D. A. Ritchie, and V. Apostolopoulos
Opt. Express 22(3) 3234-3243 (2014)