Abstract

The time responses of the photorefractive effect in semi-insulating InP doped with Fe and CdTe doped with In are measured. Using microjoule infrared pulses, gratings can be written and erased in less than a microsecond and probably much faster. Through use of a pulsed applied field, good diffraction efficiencies are achieved along with fast dark relaxation times of the order of 10⁻⁴ sec. These factors indicate that semiconductors have promise for photorefractive image-processing applications.

© 1986 Optical Society of America

Nonlinear response function for time-domain and frequency-domain four-wave mixing

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